(China (Mainland))
Product Summary
The TOSHIBA product 2SK3476 listed in this document is intended for high frequency Power Amplifier of telecommunications equipment.The TOSHIBA product 2SK3476 is neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment.
Parametrics
2SK3476 absolute maximum ratings: (1)Drain-source voltage VDSS: 20 V; (2)Gain-source voltage VGSS: 10 V; (3)Drain current ID: 3 A; (4)Power dissipation PD: 20 W; (5)Channel temperature Tch: 150 ℃; (6)Storage temperature range Tstg: -45~150 ℃.
Features
2SK3476 features: (1)Output power: PO = 7.0 W (min); (2)Gain: GP = 11.4dB (min); (3)Drain efficiency: ηD = 60% (min).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 2SK3476 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
2SK3001 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
2SK3009 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
2SK3012 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
2SK3013 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
 |
2SK3017 |
|
MOSFET N-CH 900V 8.5A TO-3PN |
Data Sheet |
Negotiable |
|
||||||||||||
|
2SK3017(F) |
Toshiba |
MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm |
Data Sheet |
|
|
||||||||||||
