(China (Mainland))
Product Summary
The FDS8880 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The FDS8880 has been optimized for low gate charge, low rDS(on) and fast switching speed. The applications of the FDS8880 include DC/DC converters.
Parametrics
FDS8880 absolute maximum ratings: (1)Drain to Source Voltage: 30 V; (2)Gate to Source Voltage: ±20 V; (3)Drain Current: 11.6 A; (4)Continuous (TA = 25℃, VGS = 10V, RθJA = 50℃/W): 11.6 A; (5)Continuous (TA = 25℃, VGS = 4.5V, RθJA = 50℃/W): 10.7 A; (6)Pulsed: 83 A; (7)Single Pulse Avalanche Energy: 82 mJ; (8)Power dissipation: 2.5 W; (9)Derate above 25oC: 20 mW/℃; (10)Operating and Storage Temperature; -55 to 150 ℃.
Features
FDS8880 features: (1)rDS(on) = 10mΩ, VGS = 10V, ID = 11.6A; (2)rDS(on) = 12mΩ, VGS = 4.5V, ID = 10.7A; (3)High performance trench technology for extremely low rDS(on); (4)Low gate charge; (5)High power and current handling capability; (6)RoHS Compliant.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FDS8880 |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench MOSFET |
Data Sheet |
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FDS8880_F123 |
Fairchild Semiconductor |
MOSFET 30V N-CHAN 11.6A |
Data Sheet |
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