(China (Mainland))
Product Summary
The FQA19N60 is a 600V N-channel enhancement mode power field effect transistor. It is produced using the proprietary, planar stripe, DMOS technology of Fairchild. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQA19N60 is well suited for high efficiency switch mode power supply.
Parametrics
FQA19N60 absolute maxing ratings: (1)VDSS Drain-Source Voltage: 600V; (2)ID Drain Current Continuous (TC = 25℃): 18.5A; Continuous (TC = 100℃): 11.7A; (3)IDM Drain Current - Pulsed: 74A; (4)VGSS Gate-Source Voltage: ±30V; (5)EAS Single Pulsed Avalanche Energy: 1150mJ; (6)IAR Avalanche Current: 18.5A; (7)EAR Repetitive Avalanche Energy: 30mJ; (8)dv/dt Peak Diode Recovery dv/dt: 4.5V/ns; (9)PD Power Dissipation (TC = 25℃): 300W; Derate above 25℃: 2.38 W/℃; (10)TJ, TSTG Operating and Storage Temperature Range: -55 to +150℃; (11)TL Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds: 300℃.
Features
FQA19N60 features: (1)18.5A, 600V, RDS(on) = 0.38Ω@ VGS = 10V; (2)Low gate charge ( typical 70 nC); (3)Low Crss ( typical 35 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FQA19N60 |
Fairchild Semiconductor |
MOSFET 600V N-CH QFET |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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Quantity | ||||||||||||
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FQA11N90_F109 |
Fairchild Semiconductor |
MOSFET 900V N-Channel QFET |
Data Sheet |
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FQA11N90C |
Fairchild Semiconductor |
MOSFET 900V N-Ch Q-FET advance C-Series |
Data Sheet |
Negotiable |
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FQA11N90C_F109 |
Fairchild Semiconductor |
MOSFET 900V N-Ch Q-FET advance C-Series |
Data Sheet |
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FQA19N60 |
Fairchild Semiconductor |
MOSFET 600V N-CH QFET |
Data Sheet |
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FQA13N80 |
Fairchild Semiconductor |
MOSFET TO-3P N-CH 600V |
Data Sheet |
Negotiable |
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FQA13N50CF_F109 |
Fairchild Semiconductor |
MOSFET 500V N-Ch C-FET |
Data Sheet |
Negotiable |
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