(China (Mainland))
Product Summary
The IXFH26N50Q is a HiPerFET Power MOSFET.
Parametrics
IXFH26N50Q absolute maximum ratings: (1)VDSS: 500 V at TJ = 25℃ to 150℃; (2)VDGR: 500 V at TJ = 25℃ to 150℃; RGS = 1 MΩ; (3)VGS: ±20 V at Continuous; (4)VGSM: ±30 V at Transient; (5)ID25: 26 A at TC = 25℃; (6)IDM: 104 A at TC = 25℃; (7)IAR: 26 A at TC = 25℃; (8)EAR: 30 mJ at TC = 25℃; (9)EAS: 1.5 J at TC = 25℃; (10)dv/dt: 5 V/ns at IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150℃, RG = 2 Ω; (11)PD: 300 W at TC = 25℃; (12)TJ: -55 to +150 ℃; (13)TJM 150 ℃; (14)Tstg: -55 to +150 ℃.
Features
IXFH26N50Q features: (1)IXYS advanced low Qg process; (2)International standard packages; (3)Low RDS (on); (4)Unclamped Inductive Switching (UIS) rated; (5)Fast switching; (6)Molding epoxies meet UL 94 V-0 flammability classification.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IXFH26N50Q |
Ixys |
MOSFET 500V 26A |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
 |
IXFH 18N60P |
Other |
|
Data Sheet |
Negotiable |
|
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|
IXFH 28N50F |
Other |
|
Data Sheet |
Negotiable |
|
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|
IXFH/IXFM42N20 |
Other |
|
Data Sheet |
Negotiable |
|
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|
IXFH100N25P |
Ixys |
MOSFET 100 Amps 250V 0.027 Rds |
Data Sheet |
Negotiable |
|
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|
IXFH102N15T |
Ixys |
MOSFET 102 Amps 0V |
Data Sheet |
Negotiable |
|
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|
IXFH10N100 |
Ixys |
MOSFET 1KV 10A |
Data Sheet |
Negotiable |
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