Product Summary

The IXFH26N50Q is a HiPerFET Power MOSFET.

Parametrics

IXFH26N50Q absolute maximum ratings: (1)VDSS: 500 V at TJ = 25℃ to 150℃; (2)VDGR: 500 V at TJ = 25℃ to 150℃; RGS = 1 MΩ; (3)VGS: ±20 V at Continuous; (4)VGSM: ±30 V at Transient; (5)ID25: 26 A at TC = 25℃; (6)IDM: 104 A at TC = 25℃; (7)IAR: 26 A at TC = 25℃; (8)EAR: 30 mJ at TC = 25℃; (9)EAS: 1.5 J at TC = 25℃; (10)dv/dt: 5 V/ns at IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150℃, RG = 2 Ω; (11)PD: 300 W at TC = 25℃; (12)TJ: -55 to +150 ℃; (13)TJM 150 ℃; (14)Tstg: -55 to +150 ℃.

Features

IXFH26N50Q features: (1)IXYS advanced low Qg process; (2)International standard packages; (3)Low RDS (on); (4)Unclamped Inductive Switching (UIS) rated; (5)Fast switching; (6)Molding epoxies meet UL 94 V-0 flammability classification.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
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IXFH26N50Q
IXFH26N50Q

Ixys

MOSFET 500V 26A

Data Sheet

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(USD)
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