Product Summary

The K6X4016C3F-UF55 is a 256Kx16 bit Low Power full CMOS Static RAM. The K6X4016C3F-UF55 is fabricated by SAMSUNG’s advanced full CMOS process technology. The K6X4016C3F-UF55 supports various operating temperature range and small package types for user flexibility of system design. The K6X4016C3F-UF55 also supports low data retention voltage for battery back-up operation with low data retention current.

Parametrics

K6X4016C3F-UF55 absolute maximum ratings: (1)Voltage on any pin relative to Vss, VIN,VOUT: -0.5 to VCC+0.5V(max. 7.0V) V; (2)Voltage on Vcc supply relative to Vss, VCC: -0.3 to 7.0 V; (3)Power Dissipation, PD: 1.0 W; (4)Storage temperature, TSTG: -65 to 150℃; (5)Operating Temperature, TA: 0 to 70℃.

Features

K6X4016C3F-UF55 features: (1)Process Technology: Full CMOS; (2)Organization: 256Kx16; (3)Power Supply Voltage: 4.5~5.5V ; (4)Low Data Retention Voltage: 2V(Min); (5)Three state output and TTL compatible; (6)Package Type: 44-TSOP2-400F.

Diagrams

K6X4016C3F-UF55 functional block diagram

K6X4008
K6X4008

Other


Data Sheet

Negotiable 
K6X4008C1F-B
K6X4008C1F-B

Other


Data Sheet

Negotiable 
K6X4008C1F-BF55
K6X4008C1F-BF55

Other


Data Sheet

Negotiable 
K6X4008C1F-F
K6X4008C1F-F

Other


Data Sheet

Negotiable 
K6X4008C1F-Q
K6X4008C1F-Q

Other


Data Sheet

Negotiable 
K6X4008C1F-UF55 (ROHS)
K6X4008C1F-UF55 (ROHS)

Other


Data Sheet

Negotiable