(China (Mainland))
Product Summary
The RD70HHF1 is a MOSFET type transistor specifically designed for HF High power amplifiers applications.
Parametrics
RD70HHF1 absolute maximum ratings: (1)Drain to source voltage: 50 V at Vgs=0V; (2)Gate to source voltage: +/-20 V at Vds=0V ; (3)Channel dissipation: 150 W at Tc=25℃; (4)Input power: 5 W at Zg=Zl=50Ω; (5)Drain current: 20 A; (6)Channel Temperature: 175℃; (7)Storage temperature: -40 to +175 ℃; (8)Thermal resistance: 1.0 ℃/W at junction to case.
Features
RD70HHF1 features: (1)high power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz; (2)high Efficiency: 60%typ.on HF Band.
Diagrams
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 RD70HHF1 |
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RD701F-20B1-15F-A100K |
Alpha (Taiwan) |
Potentiometers Audio 7mm 100K |
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RD701F-20B1-15F-A10K |
Alpha (Taiwan) |
Potentiometers Audio 7mm 10K |
Data Sheet |
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RD701F-20B1-15F-A50K |
Alpha (Taiwan) |
Potentiometers Audio 7mm 50K |
Data Sheet |
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RD701F-20B1-15F-B100K |
Alpha (Taiwan) |
Potentiometers Linear 7mm 100K |
Data Sheet |
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RD701F-20B1-15F-B10K |
Alpha (Taiwan) |
Potentiometers Linear 7mm 10K |
Data Sheet |
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RD701F-20B1-15F-B50K |
Alpha (Taiwan) |
Potentiometers Linear 7mm 50K |
Data Sheet |
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