Product Summary

The RD70HHF1 is a MOSFET type transistor specifically designed for HF High power amplifiers applications.

Parametrics

RD70HHF1 absolute maximum ratings: (1)Drain to source voltage: 50 V at Vgs=0V; (2)Gate to source voltage: +/-20 V at Vds=0V ; (3)Channel dissipation: 150 W at Tc=25℃; (4)Input power: 5 W at Zg=Zl=50Ω; (5)Drain current: 20 A; (6)Channel Temperature: 175℃; (7)Storage temperature: -40 to +175 ℃; (8)Thermal resistance: 1.0 ℃/W at junction to case.

Features

RD70HHF1 features: (1)high power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz; (2)high Efficiency: 60%typ.on HF Band.

Diagrams

UPD78P054GC test circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
RD70HHF1
RD70HHF1
Other

Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
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Data Sheet
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RD70HHF1
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Data Sheet
Negotiable 
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Data Sheet
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