(China (Mainland))
Product Summary
The W39V080FAPZ is an 8-megabit, 3.3-volt only CMOS flash memory organized as 1M × 8 bits. For flexible erase capability, the 8Mbits of data are divided into 16 uniform sectors of 64 Kbytes. The W39V080FAPZ can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is required for accelerated program. The unique cell architecture of the W39V080FAPZ results in fast program/erase operations with extremely low current consumption. This device can operate at two modes, Programmer bus interface mode and FWH bus interface mode. As in the Programmer interface mode, it acts like the traditional flash but with a multiplexed address inputs. But in the FWH interface mode, this device complies with the Intel FWH specification. The W39V080FAPZ can also be programmed and erased using standard EPROM programmers.
Parametrics
W39V080FAPZ absolute maximum ratings: (1)Power Supply Voltage to VSS Potential: -0.5 to +4.0 V; (2)Operating Temperature: 0 to +70 ℃; (3)Storage Temperature: -65 to +150 ℃; (4)D.C. Voltage on Any Pin to Ground Potential: -0.5 to VDD +0.5 V; (5)VPP Voltage: -0.5 to +13 V; (6)Transient Voltage (<20 nS) on Any Pin to Ground Potential: -1.0 to VDD +0.5 V.
Features
W39V080FAPZ features: (1)Single 3.3-volt operations: 3.3-volt Read, 3.3-volt Erase, 3.3-volt Program; (2)Fast program operation: VPP = 12V, Byte-by-Byte programming: 9 μs (typ.); (3)Fast erase operation: Sector erase 0.9 Sec. (typ.); (4)Fast read access time: Tkq 11 nS; (5)Endurance: 30K cycles (typ.); (6)Twenty-year data retention; (7)16 Even sectors with 64K bytes; (8)Any individual sector can be erased.
Diagrams
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